Functional Block Diagram

Product Highlights:
- Ultra-wideband operation from 5 to 18 GHz
- CMOS process, enabling low-cost mass production
- Excellent RF performance: flat Tx/Rx gain, high output power, and high-accuracy amplitude and phase control
- High integration and multifunctionality:
— Integrated 5-channel power control: supports PA gate bias (PA_VG), drain bias (PA_VD), LNA drain bias (LNA_VD), switch control (SW), attenuator (ATT), phase shifter (PHS), etc., enabling direct interface with compound semiconductor ICs.
— Integrated temperature sensor and temperature compensation, ensuring stable performance across a wide temperature range
— Integrated quantized 8-bit ADC
— Integrated power detector, covering –20 to +10 dBm input range
— Integrated beam storage supporting up to 121 preset beam states
— Integrated beam control logic for amplitude/phase switching, channel control, and auxiliary functions
Key Features:
- Operating frequency: 5–18 GHz
- TDD half-duplex transmit/receive switching
- 4T4R RF channels with integrated power splitters and combiners
- 360° phase control, 7-bit resolution, 8° LSB
- 5 dB amplitude control range, 6-bit resolution, 0.5 dB LSB
- Integrated bias and channel control
- Integrated temperature sensor
- Integrated 8-bit ADC
- Beam storage for up to 121 beam states
- Power detection range: –20 dBm to +10 dBm
- Single-pin Tx/Rx switch control
- Standard 4-wire SPI interface
- Rx path supports both standard bias mode and high IP1dB mode
Applications:
- Phased array radar
- Satellite communication systems